| PART |
Description |
Maker |
| FM23MLD16-60-BG |
8Mbit F-RAM Memory
|
Cypress Semiconductor
|
| LH28F800BJHE-PTTLT6 |
Flash Memory 8Mbit (512Kbitx16 / 1Mbitx8)
|
Sharp Microelectronics
|
| AN1535 |
DESIGN-IN OF THE M29W800D 8MBIT FLASH MEMORY
|
SGS Thomson Microelectronics
|
| AN1556 |
DESIGN-IN OF THE M29F800D 8MBIT FLASH MEMORY
|
SGS Thomson Microelectronics
|
| F25L008A-100PAIG F25L008A-50PAIG F25L008A1 |
8Mbit (1Mx8) 3V Only Serial Flash Memory
|
Elite Semiconductor Memory Technology Inc.
|
| M28F008 |
8MBit(1MBitx8) Flash Memory(8M1MBitx8)闪速存储器)
|
Intel Corp.
|
| ES29BDS160DT-70WC ES29LV800D-70TG ES29LV800E ES29L |
8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
EXCELSEMI[Excel Semiconductor Inc.]
|
| A25QFM080QL A25QFQ4080QL A25QFO080QL |
8Mbit, 3V Suspend/Resume, Dual/Quad-I/O Serial Flash Memory
|
AMIC Technology
|
| AM29F800BT-120ED AM29F800BB-70SD AM29F800BB-90SD A |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 5V PROM, 120 ns, PDSO48
Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
512K X 16 FLASH 5V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MB84VD22182EE-90-PBS MB84VD22184EE-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| ST10F168 ST10F168-Q3 ST10F168-Q6 DATASHEET |
ST10F168 - 16-BIT MCU - 8KB RAM - 256KB FLASH MEMORY - 111 I/O - 1 CAN 2.0B INTERFACE
16-BIT MCU WITH 256K BYTE FLASH MEMORY AND 8K BYTE RAM
|
STMICROELECTRONICS[STMicroelectronics]
|
